2026
30Jun
Analog Power 今日正式启动 BSS126 的市场推广。这是一款高效率的 600V N通道耗尽型功率 MOSFET，旨在通过行业标准的 SOT-23 封装提供卓越的高压性能并简化电路设计。
阅读新闻稿31May
Analog Power 今日发布AMPMH600UNE，这是一款高效能的20V、600mΩ N 通道功率MOSFET。该元件采用超紧凑的DFN0.6x0.6-3EP封装，并配备专用的散热焊盘，旨在协助工程师在空间受限的微型设计中最大化提升散热效能与电路板布局效率。
阅读新闻稿30Apr
Analog Power 今日发布全新 AMDMP45H4D9HK3，这是一款采用 TO-252 封装的高压 -450V P 沟道 MOSFET。该器件具备 4.9Ω 的导通电阻（RDS(on)），专为稳定高压切换优化，能显著简化高侧驱动电路设计并优化布局灵活性。
阅读新闻稿03Mar
为满足不同设计需求，Analog Power Inc. 为该 600V P 沟道 MOSFET 系列提供多种行业标准封装，说明工程师在散热性能、功率密度和 PCB 占板面积之间灵活取舍。
阅读新闻稿18Jan
Analog Power 今日正式推出 AMS406N，一款超低导通电阻 0.99mΩ、额定 30V 的 N 沟道 MOSFET，在小尺寸功率器件领域树立了全新标杆。
阅读新闻稿2025
02May
Analog Power announced the launch of its latest 2.5 milliohm (mOhm), 100-volt (V) N-channel MOSFET, housed in the advanced TO-263-7L package. Designed to deliver exceptional efficiency and thermal performance, this new device is engineered to meet the demanding needs of modern power electronics applications.
阅读新闻稿01Apr
Analog Power releases a new record-low on-resistance 100-V N channel MOSFET in the TO-263 ( D2Pak ) package targeted at the new generation of cordless power tools and other motors operating off a 75-V maximum DC rail.
阅读新闻稿2024
12Dec
Analog Power introduces a low RDS 100-V P-Channel MOSFET for high side switching and regulation. The AM90P10-19B in a D2Pak package allows simple power switching with inrush limiting for 48V and higher bus voltages.
阅读新闻稿2016
01Dec
The 100-V AMR416N N-Channel MOSFET has an on-resistance of 10 m Ohm and half the input capacitance of prior devices making it ideal for synchronous rectification in travel chargers and similar applications.
阅读新闻稿01Sep
Low RDS 100-V P-Channel MOSFET for high side switching and regulation. The AM90P10-19B in a D2Pak package allows simple power switching with inrush limiting for 48V and higher bus voltages.
阅读新闻稿05Jul
New Record-Low RDS N-Channel 100V MOSFET in D2Pak Package for Motor Control
阅读新闻稿01Jun
New 200-V N-Channel MOSFETs for Power over Ethernet Applications Give Extra Voltage Headroom
阅读新闻稿06May
Improved Figure of Merit 30-V N-Channel MOSFETs for Synchronous Rectification
阅读新闻稿02May
Family of Improved Figure of Merit 150-V N-Channel MOSFETs for Power over Ethernet Applications
阅读新闻稿20Mar